| 摘要 |
A semiconductor device and method therefor which can easily form a shallow junction and decrease a junction leakage current is disclosed. A contact hole(22) is self-aligned using etching barrier layers(15, 18) surrounded of a gate electrode(13). When an isolation spacer(19) is etching for forming an LDD(lightly doped drain), a thickness of screen insulator(17) is uniformly controlled, thereby easily forming a shallow junction. The damage of the surface of the semiconductor substrate(11) is prevented by using the self-aligned contact hole(22) using the barrier layers(15, 18) as an etching mask.
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