| 摘要 |
<p>The diode includes an N-type substrate with its top surface presenting an area (3) of P-type. A similar area (4) is defined on the opposite surface of the substrate. Corresponding N-type regions (6,7) are formed within each of the two P-type areas. The border of the component is surrounded by a P-type trench (31) obtained by deep diffusion from the top and bottom surfaces. N-type regions (51,52) are formed between the top surface P-type area and the trench, while a P-type ring (55) covers the contact region between the trench and the N-type regions. Two metal layers are deposited on the two surfaces of the component.</p> |
