METHOD OF MEASURING HYDROGEN DENSITY IN SILICON CRYSTAL,申请号KR19970036437-传众专利搜索

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发明名称	METHOD OF MEASURING HYDROGEN DENSITY IN SILICON CRYSTAL
摘要
申请公布号	KR0127998(B1)	申请公布日期	1998.04.01
申请号	KR19970036437	申请日期	1997.07.31
申请人	FUJITSU KK.	发明人	HARAM, AKITO;KOIZUKA, MASAAKI
分类号	C30B33/02;(IPC1-7):C30B33/02	主分类号	C30B33/02
代理机构		代理人
主权项
地址

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