摘要 |
<p>A method for processing a peripheral chamfered portion of a wafer (W) having an orientation flat portion (W1), comprises: a first honing step for honing the orientation flat portion (W1) of the wafer (W) by relatively pressing the orientation flat portion (W1) against a cylindrical honing stone (21) with a first pressing force (F1), while rotating the wafer (W) at a first rotational speed (Ns1) and rotating the honing stone (21); a second honing step for honing the circumferential portion (W2) of the wafer (W) by relatively pressing the circumferential portion (W2) against the cylindrical honing stone (21) with a second pressing force (F2), while rotating the wafer (W) at a second rotational speed (Nsl) and rotating the honing stone (21); a third honing step for honing the edge portions (W3) of the wafer (W) by relatively pressing the edge portions (W3) against the cylindrical honing stone (21) with a third pressing force (F3), while rotating the wafer (W) at a third rotational speed (Ns3) and rotating the honing stone (21); and a polishing step for polishing the honed orientation flat portion (W1), the honed circumference portion (W2) and the honed edge portions (W3); wherein the first, second and third rotational speeds (Ns1, Ns2 and NS3), of the wafer (W) are different from one another; or the first, second and third pressing forces (F1, F2 and F3) are different from one another. <IMAGE></p> |
申请人 |
SHIN-ETSU HANDOTAI CO., LTD |
发明人 |
HASEGAWA, FUMIHIKO, LTD;KURODA, YASUYOSHI,;YAMADA, MASAYUKI, |