Planar semiconductor component for monolithic integrated circuit

摘要

The low-ohmic buried layer (10) is laterally fitted under one main plane (9) of the semiconductor component and can be contacted in the plane via at least one highly doped terminal. A further layer (5) is deposited over the buried layer. The buried layer contains at least two stacked doping zones (2, 4) in electric contact, both enclosing in their lateral extension an epitaxial intermediate layer (3). Pref. the buried layer comprises another epitaxial intermediate layer and doping zone in electric contact with the two stacked doping zones.