| 摘要 |
Semiconductor memory device consists of a memory cell, a pair of the bit-line, a pair of the data-line, a column selection transistor, a pull-up transistor, an address situation shift detecting means, a data situation shift detecting means, and a control circuit. The said device dividually generates the bit-line equivalent signal and the bit-line pre-charging signal, and supplies the signals to the bit-line relating to the memory cell.
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