| 摘要 |
PROBLEM TO BE SOLVED: To increase the throughput in a chemomechanical polishing(CMP), and reduce the cost of an abrasive material. SOLUTION: This polishing device is composed of a polishing machine 3 furnishing a polishing pad 4 consisting of a polyurethane or the like on the front surface 3a, and rotating in the polishing time; a pressurizing head 6 to press a semiconductor wafer 1 to the polishing pad 4 while rotating in the polishing time; a polishing table rotating means 8 to rotate the polishing table 3; a pressurizing head rotating means 9 to rotate the pressurizing head 6; a slurry feeding means 11 to feed a slurry 2 on the polishing pad 4 through a nozzle 10; and luminous sources 14 set on the opposing surfaces of the polishing board 3 and the guide rings 5 installed on the front ends 6a of the pressurizing head 6. In this case, an illumination is irradiated to the slurry 2 fed on the polishing pad 4 by the luminous sources 14, to give light energy to the slurry 2, and the chemical reaction of the slurry 2 and a film 1c to be polished is promoted. |
