FORMATION OF RESIST PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a method for forming resist patterns capable of preventing the burning phenomenon of a photosensitive film which arises at the time of photoresist patterning. SOLUTION: In the method for forming fine resist patterns by applying the photosensitive film on a semiconductor wafer 10, then etching the film, a step for executing a DUV (deep ultraviolet) exposure 16 stage of a sufficient quantity in order to adjust a thermal flow rate of the resist patterns 12 after the application of the photosensitive film and an etching stage after curing the patterns by adding a high-temp. baking stage in order to prevent the burning of the resist patterns 12 are executed.