发明名称 |
Resist pattern forming method using anti-reflective layer, resist pattern formed, and method of etching using resist pattern and product formed |
摘要 |
A first method forms between the substrate and resist film an anti-reflective film whose photoabsorbance of the exposure light is greater on the substrate surface side than on the resist surface side. A second method forms between the substrate and resist film a two-layer anti-reflective film made up of an upper-layer film which is an interference film for the exposure light and a lower-layer film which has higher exposure light absorbance than the upper-layer film and functions as a light shielding film. A third method forms between the substrate and resist film a two-layer anti-reflective film consisting of a lower-layer film that reflects the exposure light and an upper-layer film that is an interference film for the exposure light. A very high anti-reflection effect can be obtained without aspect ratio problems during the process of forming the anti-reflective film and without being influenced by the kind of substrate including those having a transparent film. With these methods, it is possible to form a fine and highly precise resist pattern. These methods can be used to form patterned resist films to etch object films, e.g., in forming microcircuits and/or gates (and word lines) of semiconductor devices.
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申请公布号 |
US5733712(A) |
申请公布日期 |
1998.03.31 |
申请号 |
US19960601361 |
申请日期 |
1996.02.16 |
申请人 |
HITACHI, LTD. |
发明人 |
TANAKA, TOSHIHIKO;UCHINO, SHOICHI;ASAI, NAOKO |
分类号 |
G03F7/09;(IPC1-7):G03C1/825 |
主分类号 |
G03F7/09 |
代理机构 |
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地址 |
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