| 摘要 |
When the upper limit value of a leakage current allowed by a read.detection/write circuit connected to a plurality of bit lines to read and write data from and in memory cells is represented by IL, Vs satisfies <IMAGE> (ln is the natural logarithm) where Vgh is the potential of a non-selected word line, Vta is the average threshold voltage of the memory cells, e is the standard deviation, s is the subthreshold coefficient, Vd is the potential of the bit lines, and Vs is the potential of a source line.
|
