| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an epitaxial wafer which is used for manufacturing a light emitting diode, high in productivity, and manufactured at a low cost. SOLUTION: A p-type AlGaAs first clad layer 3 is grown on a P-type GaAs substrate 2, and then A1, Ga, As and additional material such as P-type dopant and the like are added to a residual material solution 3a and heated to a prescribed temperature, whereby the residual material solution 3a can be turned into a material solution 4a which is used for growing a P-type AlGaAs second clad layer 4. When a P-type AlGaAs active layer 5 is grown, additional materials 32 such as N-type dopant and the like are added to the material solution 4a of the P-type AlGaAs second clad layer 4 to invert the conductivity type of the material solution 4a from the P-type to the N-type, whereby the material solution 4a is turned to material solution 6a for an N-type AlGaAs window layer 6. Therefore, only two types of material solutions for two layers are prepared, so that Ga can be reduced to half in consumption in this manufacturing method as compared with a conventional method in which four types of material solutions are prepared for four layers. |
