| 摘要 |
PROBLEM TO BE SOLVED: To improve the characteristics of a GaN-system compound semiconductor layer, by forming an AlN layer containing Mg on a substrate, and forming the GaN-system compound semiconductor layer on the AlN layer at a specified temperature. SOLUTION: A saphire substrate 1 is maintained at, e.g. 1,000 deg.C, NH3 is introduced into a growing chamber and the surface of the substrate 1 is nitrided. Then, the temperature of the substrate 1 is lowered to, e.g. 600 deg.C, trimethyl aluminum and NH3 are introduced, bis(ethyl cyclopentadienyl) Mg is introduced and a capped AlN layer 2 is formed. After the AlN layer 2, wherein Mg is added, is formed on the substrate 1, the substrate 1 is heated. With the temperature of the substrate 1 being maintained at, e.g. 950 deg.C, trimethyl gallium and NH3 are introduced into the growing chamber, and a P-type GaN layer 3 is formed. When the GaN layer 3 is formed, Mg in the AlN layer 2 is diffused in the GaN layer 3 and made active, and the P-type GaN layer 3 is formed. |
