发明名称 |
Semiconductor device and method of making |
摘要 |
A semiconductor device (10) is formed in a semiconductor substrate (11) that acts as a collector region. A base region (12) is formed in the semiconductor substrate (11) and an emitter region (52) is formed such that it contacts at least a portion of the base region (12). A conductive layer (28) is used to provide electrical connection to the emitter region (52). The portion of the conductive layer (28) above the emitter region (52) is counter-doped to address the problems of an interfacial oxide layer (27) that exists between the emitter region (52) and the conductive layer (28).
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申请公布号 |
US5734194(A) |
申请公布日期 |
1998.03.31 |
申请号 |
US19970792602 |
申请日期 |
1997.01.31 |
申请人 |
MOTOROLA, INC. |
发明人 |
SANDERS, PAUL W.;MACKIE, TROY E.;COSTA, JULIO C.;FREEMAN, JR., JOHN L.;WOOD, ALAN D. |
分类号 |
H01L29/73;H01L21/265;H01L21/331;H01L29/08;H01L29/732;(IPC1-7):H01L27/082;H01L27/102;H01L29/70;H01L31/11 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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