| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a cold electron emitting element of field emission type and its method of manufacturing, thereby it is practicable to suppress a large current flowing locally without raising the operating voltage and use a glass base board capable of being easily produced at a low cost and embodies with a large area. SOLUTION: A p-type semiconductor thin film 3a and an n-type semiconductor thin film 3b are laminated on an emitter wiring layer 2 in this order and thereover an emitter 4 is formed, which is itself equipped with a current controlling function by providing pn joint, and thus it is possible to suppress a large current flowing locally without raising the working voltage and also minimize current variation through control of individual elements. Further a hydrogenated amorphous silicon thin film is used as semiconductor thin film to form the pn joint, which makes possible the use of a glass base board 1 capable of being easily produced at a low cost and embodies with a large area.</p> |
