| 摘要 |
A sputtering target formed of a refractory metallic silicide having a composition MSix including a mixture composition of an MSi2 phase in the form of particles (M: at least one refractory metal selected from a group consisting of W, Mo, Ti, Zr, Hf, Ni and Ta), and an Si phase provided as a matrix phase. Interface layers having a predetermined thickness are formed at the interfaces between the MSi2 phase and the Si phase. The value X in the composition formula MSix is set to a range of 2.0 to 4.0, and the thickness of the interface layers formed between the MSi2 phase and the Si phase, the dispersion of the composition, the density ratio of the target, the electrical resistivity of the Si phase and the surface roughness are set to predetermined values. An uniform high-quality thin film in which a composition distribution is uniform can be manufactured stably by using this target.
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