| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for fabricating a thin-film transistor matrix device wherein an operational semiconductor layer is formed on a gate electrode, which can reduce the change in an overlap area between gate, source and drain electrodes of a thin-film transistor within an identical substrate and can suppress variations in a parasitic capacitance between the gate and source based on the fluctuations. SOLUTION: A photosensitive film is exposed from a rear side of a transparent substrate 21 with use of a gate electrode 22 as a mask and then developed to leave a photosensitive film 25a on an insulating film 24 on the gate electrode 22. Next, conductive films 27 and 28 are formed, the conductive films 27 and 28 on the photosensitive film 25a is removed by a life-off process, and then subjected to a patterning process to form source and drain electrodes 30a and 30b at both sides of the gate electrode 22. Thereafter, an operational semiconductor layer is formed between the source and drain electrodes 30a and 30b as overlapped at least partially on the source and drain electrodes 30a and 30b.</p> |
