发明名称 PRODUCTION OF SINGLE CRYSTAL AND APPARATUS THEREFOR
摘要 PROBLEM TO BE SOLVED: To prolong an operating time between two required maintenance operations. SOLUTION: This method for producing a single crystal comprises pulling up the single crystal from a melt according to a Czochralski(CZ) process in a pulling up chamber flushed with an inert gas. The method comprises (a) providing the first inner chamber 14 and the second inner chamber respectively defined by lateral faces, the upper parts and bottom boundaries in a pulling up chamber 1, (b) feeding the first inert gas stream through an upper boundary of the first inner chamber 14 into the first inner chamber 14 housing a thermal shield 7 arranged around the single crystal 3 and a crucible 5a containing a melt 4 and (c) feeding the second inert gas stream through a bottom boundary of the second inner chamber housing a heater 9 for heating the crucible 5a into the second inner chamber. Thereby, the first inert gas and the second inert gas cannot be mixed only after emerging the inner chambers at the earliest.
申请公布号 JPH1081596(A) 申请公布日期 1998.03.31
申请号 JP19970188460 申请日期 1997.07.14
申请人 WACKER SILTRONIC G FUER HALBLEITERMATERIALIEN AG 发明人 NEMETZ FRIEDRICH
分类号 C30B15/20;C30B15/00;C30B15/14;C30B29/06;(IPC1-7):C30B29/06 主分类号 C30B15/20
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