Semiconductor wafer for epitaxially grown devices having a sub-surface getter region

摘要

In a semiconductor wafer according to this invention, an epitaxial layer is formed on the surface of a semiconductor substrate, a second element which is not the same but homologous as a first element constituting the semiconductor substrate is present to have a peak concentration on the semiconductor substrate side rather than the surface, and this peak concentration is 1x1016 atoms/cm3 or more.