| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium nitride system semiconductor light emitting device, which has a high quality re-growth boundary surface and facilitates the improvement of reliability and device characteristics. SOLUTION: An N-type GaN buffer layer 2, an N-type Al0.1 Ga0.9 N cladding layer 3, a non-doped In0.15 Ga0.85 N active layer 4, an Mg-doped Al0.1 Ga0.9 N cladding layer 5, and N-type Al0.05 Ga0.95 N internal current constriction layer 7, an Mg-doped Al0.1 Ga0.9 N cladding layer 8 and an Mg-doped GaN contact layer 9 are formed on a low resistance N-type SiC substrate 1 in this order. An N- type side electrode 11 is formed on the bottom surface of the low resistance N-type SiC substrate 1 and a P-type side electrode 10 is formed on the upper surface of the Mg-doped GaN contact layer 9. Then, a surface protective layer 7' is so formed as to cover the surfaces of the N-type Al0.05 Ga0.95 N internal current constriction layer 7 and the exposed the Mg-doped Al0.1 Ga0.9 N cladding layer 5. |
