| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which has good temperature characteristics, can make its wavelength long, and can facilitate its manufacturing steps. SOLUTION: The element includes a GaAs substrate 101 of a first conduction type, at least, an active layer 105 of material which is smaller in band gap energy and larger in refractive index than GaAs, a lower cladding layer 103 of the first conduction type, a first upper cladding layer 107 of a second conduction type, a second upper cladding layer 109 of the second conduction type, a current blocking layer 108 of the first conduction type for limiting a current, which are all sequentially formed on the substrate. The current blocking layer 108, which is made of material that is smaller in band gap energy than GaAs, functions as a layer for absorbing light emitted from the active layer 105. |
