| 摘要 |
The present invention discloses a new solid state device which is herein referred to as Capacitor-N-P. This device comprises characteristics similar to those of a MOS capacitor and a P-N joint. The advantages of both structures are utilized for applications such as radiation sensors and to assess characteristics of constitutive materials, among others. The device comprises a semi-conductive substrate, an out of stoichiometry oxide, and a gate.
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