DOPING METHOD OF GAN SUBSTRATE AND DOPED GAN SUBSTRATE

摘要

PURPOSE: A doping method of GaN substrate and a doped GaN substrate are provided to make GaN substrate of a superior characteristic by using a neutron conversion doping method and performing a heat treatment at a predetermined temperature. CONSTITUTION: A doping method of GaN illuminates a thermal neutron on GaN sample, converts Ga to Ge, and thus the GaN sample is doped with Ge. The GaN sample doped with Ge is thermal processed at a predetermined temperature of 1000deg.C over. A concentration of Ge is regulated by a quantity of thermal neutron. Thereby, the doped GaN substrate makes GaN substrate of a superior characteristic by using a neutron conversion doping method and performing a heat treatment at a predetermined temperature.