METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent adjacent plugs from being short-circuited. CONSTITUTION: A gate and a cap layer(39) are formed on a semiconductor substrate(31) of the first conductivity type by intervening a gate insulating layer(35). A sidewall is formed on a side of the gate. The first interlayer dielectric(43) whose surface is planarized is manufactured to form the cap layer on the semiconductor substrate. After the second interlayer dielectric(45) composed of an insulating material with different selectivity is formed on the first interlayer dielectric, the second and first interlayer dielectrics are sequentially patterned by a photolithography method, wherein the first interlayer dielectric is patterned to have the cap layer not exposed and left between the gate. The second sidewall is formed on a side of the patterned first and second interlayer dielectrics and the first interlayer dielectric remaining between the gate is etched, so that a contact hole exposing the semiconductor substrate is formed. Impurity ions of the second conductivity are implanted into the exposed portion of the semiconductor substrate to form an impurity region. A plug is formed in the contact hole.