| 摘要 |
PURPOSE: A thin film transistor substrate for a liquid crystal display device and a fabrication method thereof are provided to simplify a fabrication process thereof. CONSTITUTION: A lower layer(221,241) of transparent conductive material, a buffer layer(222,242), and an upper layer(223,243) of low-resistance conductive material are sequentially stacked an insulation substrate(10) and then patterned by using the first resist pattern having at least three different thickness as an etch mask to form a three-layered gate wiring having a gate line(22), a gate electrode(24), and a gate pad, and a pixel electrode(28) of the lower layer. Thereafter, a gate insulating pattern(32) covering the gate wiring, a semiconductor pattern(42,48), and an etch stopper(52) over the gate electrode(24) are formed by using the second resist pattern having at least three different thickness as an etch mask. Then, an ohmic contact pattern(62,67), a data wiring(72,74,76), and a protective pattern(90) are formed by using the third resist pattern having at least three different thickness as an etch mask. After that, the semiconductor pattern exposed out of the protective pattern is removed.
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