发明名称 Process for fabricating semiconductor devices
摘要 A downflow-type ashing apparatus comprises a microwave guide for feeding microwaves, a plasma generating chamber for generating O2 plasmas by the microwaves fed into the microwave guide, and an ashing reaction chamber for ashing by the oxygen atom radicals in the O2 plasmas. The entire inside of the wall of the Al ashing reaction chamber is coated with quartz film 16. An Al shower head with a number of small holes formed so as to form a shower for passing the oxygen atom radicals from the plasma generating chamber into the ashing reaction chamber has the entire surface coated with quartz film. The apparatus can conduct a required treatment at a stable high treating rate using oxygen atom radicals in oxygen plasmas generated by radio frequencies or microwaves.
申请公布号 US5733821(A) 申请公布日期 1998.03.31
申请号 US19960706829 申请日期 1996.09.03
申请人 FUJITSU LIMITED 发明人 NISHIKAWA, KIYOKO
分类号 G03F7/42;H01L21/027;H01L21/302;H01L21/3065;H05H1/00;(IPC1-7):H05H1/00 主分类号 G03F7/42
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