| 摘要 |
PROBLEM TO BE SOLVED: To enable performing a highly accurate processing on a microwave semiconductor integrated circuit in a simple production process by a method, wherein a transmission line formed in a wiring side substrate and an extraction electrode of an active element formed on an element side substrate are electrically connected with each other using a metal bump. SOLUTION: An element side substrate 60 formed with an element such as an FET 3 and a wiring side substrate 50 formed with a buried transmission line 17 are electrically connected with each other at necessary places using a gold bump 30, whereby an effect due to a step is never exerted on the connection of the line 17 with the extraction electrode of the element such as the FET 3, and the line 17 can be easily connected with the extraction electrode. Moreover, damages can be prevented from being inflicted on the element already, such as the FET 3. |
