发明名称 |
Insulated gate field effect transistor structure having a unilateral source extension |
摘要 |
An insulated gate field effect transistor (IGFET) structure (10) includes a source region (14) and a drain region (16) formed in an impurity well (13). A channel region (18) separates the source region (14) from the drain region (16). In one embodiment, a unilateral extension region (17) is formed adjacent the source region (14) only and extends into the channel region (18). The unilateral extension region (17) has a peak dopant concentration at a depth (23) and a lateral distance (24) to provide punchthrough resistance. The IGFET structure (10) is suitable for low (i.e., 0.2-0.3 volts) to medium (0.5-0.6 volts) threshold voltage reduced channel length applications.
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申请公布号 |
US5731612(A) |
申请公布日期 |
1998.03.24 |
申请号 |
US19970842097 |
申请日期 |
1997.04.28 |
申请人 |
MOTOROLA, INC. |
发明人 |
BUXO, JUAN;DOW, DIANN;ILDEREM, VIDA;ZHOU, ZIYE;ZIRKLE, THOMAS E. |
分类号 |
H01L21/265;H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L29/76;H01L29/94 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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