| 摘要 |
PROBLEM TO BE SOLVED: To provide a conductive layer connecting structure in which platinum and silicon are not mutually diffused, even when the structure is heated at high temperature by forming a second conductive layer, including a refractory metal, silicon and nitrogen on a first conductive layer, including silicon and further forming a third conductive layer including platinum group elements on the second conductive layer. SOLUTION: Plugs 11 comprised of doped polysilicon are so formed as to fill contact holes 10 opened in a silicon oxide film 12 and to be in contact with an impurity region 8. A capacitor 30 is formed to be electrically connected to the impurity region 8 via the plugs 11. The capacitor 30 has a lower electrode layer 15 made of platinum, a capacitor dielectric film 17 made of PZT, and an upper electrode layer 18 made of platinum. The lower electrode layer 15 is formed on the surface of the silicon oxide film 12, via a barrier layer 14a made of titanium-silicon-nitride (Ti-Si-N) and a contact layer 13 made of titanium, so as to be in contact with the plugs 11. |
