| 摘要 |
PROBLEM TO BE SOLVED: To provide a high throughput method for electron beam lithography which supports a change in static distortion and dynamic distortion of a lower layer exposure device, especially a light reduced exposure device. SOLUTION: At least two marks formed in a chip are respectively detected (S30) for a predetermined number of chips, and a relationship between shape distortion and a wafer coordinate of each chip on a wafer face is obtained by statistic processing from the detected mark positions and design positions of the marks (S31, 32, 33). Thereafter, a pattern is drawn on all chips (S36, 37) while correcting the pattern to be drawn on each chip (S34, 35) using the obtained relationship between the chip shape distortion and the wafer coordinate. |
