| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a trench gate type MOS field effect transistor and its manufacturing method, wherein a channel area is not affected by high concentration impurity implantation far a well area, and a peak value of P-type impurity concentration of the channel area is easily controlled, so that a threshold voltage of the trench gate type MOSFET is easily adjusted. SOLUTION: Only a part of the bottom side of a trench T is filled to farm a gate conductive layer 16, and a heavily doped source area 14 is, together with the surface part of a well area 13, formed extending toward the inside of the well area 13 along the side wall of the trench T. In short, the N-type source area 14 is formed extending to the area having been affected at high concentration impurity implantation for a P-type well area.</p> |
