| 发明名称 |
Process for controlling dopant diffusion in a semiconductor layer and semiconductor layer formed thereby |
| 摘要 |
Diffusion of ion-implanted dopant is controlled by incorporating electrically inactive impurity in a semiconductor layer by at least one crystal growth technique.
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| 申请公布号 |
US5731626(A) |
申请公布日期 |
1998.03.24 |
| 申请号 |
US19970862226 |
申请日期 |
1997.05.23 |
| 申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
EAGLESHAM, DAVID JAMES;GOSSMANN, HANS-JOACHIM LUDWIG;POATE, JOHN MILO;STOLK, PETER ADRIAAN |
| 分类号 |
H01L21/20;H01L21/203;H01L21/205;H01L21/22;H01L21/265;H01L29/08;H01L29/10;H01L29/167;H01L29/786;(IPC1-7):H01L29/167 |
主分类号 |
H01L21/20 |
| 代理机构 |
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