MASK FOR EXPOSURE AND PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an easy pattern forming method by which a dimensional change due to a light proximity effect is suppressed and high dimension control precision is ensured. SOLUTION: In a pattern forming method in which patterns are transferred to the top of a photoresist through a photomask having patterns of the same line width at various intervals so that the patterns account for <50% of the area of the photomask, a photomask 10 having light transmitting parts 12 as pattern parts is used, the coherence factor of an exposure system is regulated to 0.4-0.9 and a negative photoresist is used.