| 摘要 |
PROBLEM TO BE SOLVED: To provide a quantum wire device, in which quantum wire structure is formed on a silicon substrate, and manufacture thereof. SOLUTION: The quantum wire device 10 comprises a silicon substrate 12, a CVD-SiO2 layer 14 on the silicon substrate 12 and array structure consisting of an array at regular intervals of V-shaped sectional silicon triangular prisms 16, in which one surfaces are exposed and which are buried into an SiO2 layer. A triangular prismatic body, in which a (100) surface 18C is exposed and which has two mutualy crossing (111) surfaces 18A, B, is used as the silicon triangular prism. A thermal oxide film 20 is formed so as to be exposed on the top face of the SiO2 layer between a pair of the silicon triangular prisms 16A, B and be interposed and extended among one (111) surface 18B of the silicon triangular prism 16A and one (111) surface 18A of the silicon triangular prism 16B and the SiO2 film 14, and also fills the role of a stopper in polishing. The SiO2 layer 14 also functions as a laminated layer with a foundation substrate 12 consisting of silicon. |
