发明名称 Fluorine residue removal after tungsten etchback
摘要 Forming tungsten plugs allows for a conformal step coverage into contacts in semiconductor wafer processing. By rinsing the wafers after the tungsten etchback but before the wafers have a chance to enter an oxygen-containing environment, the amount of fluorine-containing residue removed from the wafer can be increased. In this way, the connection between the tungsten plugs and a metallization layer can be improved.
申请公布号 US5730834(A) 申请公布日期 1998.03.24
申请号 US19960625742 申请日期 1996.03.29
申请人 VLSI TECHNOLOGY, INC. 发明人 GABRIEL, CALVIN
分类号 H01L21/02;H01L21/3213;(IPC1-7):H01L21/00 主分类号 H01L21/02
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