| 摘要 |
A method of masking semiconductor substrates during fabrication of semiconductor devices includes positioning an oxide mask on the substrate so as to define a growth area and an unmasked portion the surface. A dense oxide layer is grown on the unmasked portion and the oxide mask is removed to expose the growth area. The substrate is introduced into a growth chamber and heated to approximately 580 DEG -600 DEG C. to desorb any native oxide in the exposed growth area. Crystalline material is selectively grown on the exposed growth area and the substrate is heated to approximately 640 DEG C. under high arsenic flux to desorb the dense oxide layer, without removing the substrate from the chamber.
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