Memory having selectable output strength

摘要

An output buffer circuit of a semiconductor memory device can produce multiple output buffer drive strengths. An electronic system including a memory device in which such an output buffer circuit is implemented can include a mechanism for enabling the output buffer drive strength to be easily selected by a user of the memory device (such as an assembler of an electronic system including the memory device) from the multiple possible drive strengths. The invention thus enables a memory device to be easily configured to have an output buffer drive strength that is compatible with a wide variety of electrical loads to be driven by the output buffers of the memory device. Since the output buffer circuit of the invention allows the output buffer drive strength to be more closely tailored to the electrical load being driven, signal reflections, voltage overshoot and undershoot, and timing problems that can result from mismatch between the output buffer drive strength and the associated electrical load can be reduced.