| 摘要 |
A semiconductor fabrication process, allowing integration of MOSFET devices, and capacitor structures, on a single semiconductor chip, has been developed. The process integration features the use of a MOSFET device, fabricated using a self-aligned contact structure, allowing a reduction in the source and drain area needed for contact. Silicon nitride spacers, used on the sides of the polysilicon gate electrode, protect the polysilicon gate structure, during the opening of a self-aligned contact hole. A self-aligned contact opening, to a source and drain region of a MOSFET device, as well as a capacitor contact opening, to a capacitor structure, are formed using wet-dry etching combinations. These etching combinations result in openings exhibiting sloped profiles, allowing for the attainment of reliable metal coverage, even with the use of sputtered metal depositions.
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