Method for the determination of nitrogen concentration in compound semiconductor

摘要

An efficient method is proposed for the determination of the concentration of nitrogen in an indirect-transition compound semiconductor such as gallium phosphide added as an isoelectronic trap. The method utilizes the fact that a good correlation of proportionality is held between the nitrogen concentration and the difference DELTA alpha (= alpha N- alpha ) in the absorption coefficient of light of a wavelength identical with the wavelength lambda N due to the excitons under constraint in the isoelectronic trap between the semiconductors with ( alpha N) and without ( alpha ) addition of nitrogen. A working curve is presented between the nitrogen concentration determined by the method of SIMS and the value of DELTA alpha .