发明名称 |
Method for manufacturing a semiconductor device including pre-oxidation process |
摘要 |
A method for manufacturing a semiconductor device can reduce a micro-roughness and does not change a construction and electric characteristics of elements formed in the semiconductor device. In the method for manufacturing the semiconductor device including a pre-oxidation process in which an oxide layer is first formed on a silicon wafer, and the oxide layer is secondly eliminated to eliminate impurities on a surface of the silicon wafer, a formation of the oxide layer in the pre-oxidation process is performed in an oxidization atmosphere including H2O and gas including germanium hydride (german -GeH4-). Since german (GeH4) is included in the oxidization atmosphere, it is possible to reduce a softening temperature of the silicon dioxide formed in pre-oxidation, thereby decreasing the micro-roughness on the surface of the silicon wafer. Furthermore, since it is possible to perform the pre-oxidation process in a low temperature and in a short time, there is no change of a construction and electric characteristics of elements formed in the semiconductor device.
|
申请公布号 |
US5731247(A) |
申请公布日期 |
1998.03.24 |
申请号 |
US19950498755 |
申请日期 |
1995.07.06 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
UENO, YOSHIHIRO;AMAI, TSUTOMU;SAMATA, SHUICHI |
分类号 |
H01L21/70;H01L21/02;H01L21/28;H01L21/306;H01L21/316;H01L21/322;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/70 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|