| 摘要 |
PROBLEM TO BE SOLVED: To enable filling of metal in fine pores of a high aspect ratio perforated in a silicon substrate or the like. SOLUTION: A method for filling the metal in the fine pores comprises the steps of inserting, for example, the silicon substrate 1 having the pores 2 into a molten metal tank 23 in a vacuum chamber 11 pressure-reduced in a vacuum pressure, pressurizing the chamber 11, for example, to an atmospheric pressure or more after the substrate 1 arrives at substantially the same temperature as that of the substrate 1, and filling a molten metal 3 in the pores 2. The metal can be filled even in the pores of the high aspect ratio, and can be filled without generating an air gap such as a porosity or the like. When the metal is filled in the through pores for through electrodes, the good electrodes having no air gap can be formed.
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