THIN-FILM RESISTOR AND RESISTANCE MATERIAL FOR A THIN-FILM RESISTOR

摘要

The present invention relates to a thin-film resistor of a novel resistance material and to a sputtering target of this material. Said novel resistance material comprises a metal alloy having an intrinsically low TCR, and is characterized in accordance with the invention in that the resistance material also comprises a high-ohmic component. Said high-ohmic component preferably comprises a metal oxide and forms part of the resistance material in a quantity of 15-60 vol.%. The best results are achieved with a resistance material which comprises an alloy of CuNi as the metal alloy and SiO2 as the high-ohmic component. The resistors in accordance with the invention exhibit a relatively high resistance value as well as a relatively low TCR value.