| 摘要 |
<p>The invention relates to a method and apparatus for detecting defects in a semiconductor or silicon structure at room temperature, and in an efficient time, using photoluminescence. The invention employs the use of a high intensity beam of light preferably having a spot size between 0,1 mm-0,5 microns and a peak or average power density of 10?4-109 w/cm2¿ with a view to generating a high concentration of charge carriers, which charge characters detect defects in a semiconductor by interacting with same. These defects are visible by producing a photoluminescence image of the semiconductor. Several wavelenghts may be selected to identify defects at a selective depth as well as confocal optics may be used.</p> |
