摘要 |
<p>A method of cleaning a CVD device wherein, by-products sticking to the inner wall of a reaction chamber (12) is cleaned, and the cleaning can be finished on an accurate time. The light intensity of F radicals in a reaction chamber (12) is monitored by an emission spectrometer (40). After the light intensity reaches the saturation point of light intensity, cleaning is finished in a predetermined time. The concentration of SiF4 in the exhausted gas from the reaction chamber (12) is monitored by an infrared spectroscopy (50). When the SiF4 concentration reaches a predetermined cleaning end point, the cleaning is ended. In place of the emission spectrometer (40), a mass spectrograph (70) for measuring the F-intensity in the reaction chamber (12) can be installed.</p> |
申请人 |
RESEARCH INSTITUTE OF INNOVATIVE TECHNOLOGY FOR THE EARTH;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE;SAKAI, KATSUO;ABE, KAORU;OKURA, SEIJI;SAKAMURA, MASAJI;MURATA, HITOSHI;KAMEDA, KENJI;WANI, ETSUO;SEKIYA, AKIRA |
发明人 |
SAKAI, KATSUO;ABE, KAORU;OKURA, SEIJI;SAKAMURA, MASAJI;MURATA, HITOSHI;KAMEDA, KENJI;WANI, ETSUO;SEKIYA, AKIRA |