| 摘要 |
PROBLEM TO BE SOLVED: To realize the higher film forming speed than that by a reactive sputtering method and, at the same time, the formation of thin micro-crystal film having uniform particle diameter by a method wherein a thin vanadium oxide film, which shows a reversible metal-non-metal transition on temperature, is formed on a board by means of an ion beam sputtering method. SOLUTION: Prior to the regular sputtering for forming the film of a metal- non-metal transition layer 2, vanadium metal is sputtered so as to remove the oxide layer on the surface of a target 31 by closing a shutter 33 provided between a substrate 1 and the target 31 during the sputtering. After pre-sputtering is applied until the oxided state of the surface of the target 31 becomes steady, the shutter 33 is opened until a VO2 film having the specified thickness is formed. In this case, before the opening of the shutter 33, a board 1 is heated up to the proper temperature and held as it is for the time being. After that, a reflective film 3 is formed by means of vacuum metallizing and sputtering until the predetermined film thickness is reached. Further, an ultraviolet-curing type protective film 4 is formed by means of a spinning coating method on the reflective film 3. |
