| 摘要 |
<p>PROBLEM TO BE SOLVED: To shorten a break treating time and to prevent the generation of dirt on the surface of a wafer due to silicon dusts. SOLUTION: A wafer 1 is supported by a supporting board 11 in such a way that the main surface of the wafer 1 faces vertically downward the and the diameter D(mm) of a break ball 5 is set so as to satisfy the condition of 0.8L/tan(90-θ/2)>=<=1.2L/tan(90-θ/2) when the short sides of a chip and the bending angle of the wafer at the time, when the wafer exceeds its max, yield stress and is broken, are respectively assumed L(mm) andθ(degree).</p> |
