| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain higher integration of elements and to suppress the reaction between Pb of PZT with Si, relating to a PZT (PbZrx Ti1-x O3 ) thin-film memory. SOLUTION: A PZT thin-film memory comprises a CMOS FET structure wherein a field oxide film 120 on an Si substrate 110, a pair of doping areas 130 formed with an Si conduction channel between the field oxide films 120 in between and an SiO2 insulation layer 200 formed on the doping area and the field oxide film are provided, and a ferroelectric capacitor structure comprising a Pt electrode 150 formed on a glass substrate 180 and a PZT thin-film 140 formed on the Pt electrode 150. The Si conduction channel of the CMOS FET structure is aligned with the PZT thin film of the ferroelectric capacitor structure, for jointing in rapid heating process.</p> |
