发明名称 Conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
摘要 A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), an noble-metal-insulator-alloy barrier layer (e.g. Pd-Si-N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the noble-metal-insulator-alloy layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The noble-metal-insulator-alloy barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.
申请公布号 US5729054(A) 申请公布日期 1998.03.17
申请号 US19950473464 申请日期 1995.06.07
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 SUMMERFELT, SCOTT R.;REID, JASON;NICOLET, MARC;KOLAWA, ELZBIETA
分类号 H01G4/33;H01L21/02;H01L21/822;H01L21/8242;H01L21/8246;H01L27/04;H01L27/10;H01L27/105;H01L27/108;H01L29/92;(IPC1-7):H01L23/48 主分类号 H01G4/33
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