发明名称 |
Isolation method of semiconductor device |
摘要 |
A device isolation method divides a semiconductor substrate into active and inactive regions. A first device isolation layer is formed in a first inactive region using a trench isolation method. Then, local oxidation is used to form a second device isolation layer in a second inactive region which is wider than the first. A dishing phenomenon (generated during CMP processing) is eliminated, and proper device isolation is realized without exposing the active region.
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申请公布号 |
US5728620(A) |
申请公布日期 |
1998.03.17 |
申请号 |
US19960591826 |
申请日期 |
1996.01.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK, MOON-HAN |
分类号 |
H01L21/316;H01L21/76;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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