发明名称 DEVICE MANUFACTURING METHOD INCLUDING LITHOGRAPHY PROCESS
摘要 <p>PROBLEM TO BE SOLVED: To enable a device to be improved in manufacturing profitability and yield and to enhance a mask or a substrate in tolerance for warpage and alignment error by a method wherein a projection lithography technique is fit in the different regions of a mask by changing a pattern in intensity, and an accelerating voltage is properly selected. SOLUTION: A mask 2 is irradiated with an electron beam, wherein a scattering mask where a pattern composed of two regions of different scattering types is provided is used as the mask 2. A spatial frequency filter 6 which is arranged on the back focal plane of an electron optical system transmits electrons scattered by the one region of one scattering type and stops electrons scattered by the other region of other scattering type, so that a pattern contrast is formed.</p>
申请公布号 JPH1074695(A) 申请公布日期 1998.03.17
申请号 JP19970209044 申请日期 1997.08.04
申请人 AT & T CORP 发明人 BERGER STEVEN D;GIBSON JOHN M
分类号 G03F1/16;G03F7/20;H01J37/317;H01L21/027;H01L21/30;(IPC1-7):H01L21/027 主分类号 G03F1/16
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