摘要 |
<p>PROBLEM TO BE SOLVED: To enable a device to be improved in manufacturing profitability and yield and to enhance a mask or a substrate in tolerance for warpage and alignment error by a method wherein a projection lithography technique is fit in the different regions of a mask by changing a pattern in intensity, and an accelerating voltage is properly selected. SOLUTION: A mask 2 is irradiated with an electron beam, wherein a scattering mask where a pattern composed of two regions of different scattering types is provided is used as the mask 2. A spatial frequency filter 6 which is arranged on the back focal plane of an electron optical system transmits electrons scattered by the one region of one scattering type and stops electrons scattered by the other region of other scattering type, so that a pattern contrast is formed.</p> |