| 摘要 |
<p>PROBLEM TO BE SOLVED: To confirm the states of contact sections formed on a wafer by inspecting the contact sections by comparing and confirming the difference between contrasts of the contact-forming sections displayed by means of a scanning electron microscope. SOLUTION: A contact open inspection process S24 using an in-line scanning electron microscope is performed on all wafers or sampled wafers, after a contact etching process S4 and an etching process S10 for etching a vapor- deposited conductive layer have been conducted. The electron microscope is constituted so that the microscope can measure the intensity of secondary electrons generated when an electron beam collides with a sample and can display the signals resulting from the collision by adding the signals to the luminance-modulated input of a cathode-ray tube, scanned synchronously with the scanning of the sample. Therefore, the occurrence of a defective semiconductor device due to imperfect contacts can be prevented at an early stage.</p> |
